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为进一步推动我校学科交叉与融合，促进科研合作与创新，营造开放合作的学术交流氛围，人力资源部教师发展中心新设“前沿交叉学术论坛”，定期邀请校内外专家学者围绕交叉学科领域国际学术前沿、热点研究方向及相关科研合作等方面内容开展系列学术讲座，并与我校师生开展学术研讨和交流。
本期活动特邀香港科技大学 Kevin J. Chen（陈敬）教授与大家进行深入交流和探讨。具体事宜如下，欢迎广大师生积极参会！
一、题 目：Recent Advances in Power Integration on p-GaN Gate HEMT Platform
二、主讲人：香港科技大学 Kevin J. Chen（陈敬） 教授
三、时 间：2021年12月23日（周四）14:30
四、参会方式：腾讯会议（ID：980 250 745）
五、报告摘要：
The mainstream GaN power devices under current commercial deployment are based on a planar high-electron-mobility transistor (HEMT) structure that is inherently suitable for high-density integration, i.e., grown on large-size low-cost Si substrates and processed using Si-compatible microfabrication facilities. GaN power integrated circuits (IC’s) featuring peripheral drive/control/protection circuitries monolithically integrated with the core power switching devices, are expected to help unlock the full potential of GaN power electronics, especially in the high frequency switching capability that enables ultracompact power conversion/supply systems. In particular, the p-GaN gate normally-off HEMTs is greatly favored for single-chip integration, yet its gate structure is distinctively different from the conventional MOS-gate, which leads to new dynamic characteristics (such as dynamic threshold voltage in particular) that are not seen in Si or SiC power MOSFETs. Device characterization and modeling challenges that arise from dynamic VTH will be discussed.
The p-GaN gate HEMT platform also provides room for adding more dimensions to the power transistors. Recent development in GaN complementary logic IC technology and monolithic integration of high-/low-side power transistors, all on the p-GaN gate HEMT platform, will be introduced.
六、嘉宾简介：
Kevin J. Chen，IEEE Fellow, a Chair Professor in the Department of Electronic and Computer Engineering of HKUST, and the Technical Program Chair for ISPSD 2019. He received his B.S. degree from Peking University, Beijing, China in 1988, and PhD degree from University of Maryland, College Park, USA in 1993. After his PhD study, he conducted research on GaAs and InP based high speed device technologies in NTT LSI Laboratories, Japan and Agilent Technologies, USA. Prof. Chen joined Hong Kong University of Science and Technology (HKUST) in 2000. He is the director of Nanosystem Fabrication Facility (NFF), at HKUST.Prof. Chen has more than 500 publications in international journals and conference proceedings. He has been granted more than 20 patents on GaN electron device technologies. His research interests include wide-bandgap semiconductor devices for high-power, high-frequency, and harsh-environment applications, and semiconductor quantum technology.
七、主办单位：人力资源部教师发展中心
承办单位：电子科学与工程学院
人力资源部教师发展中心
2021年12月20日
编辑：助理编辑 / 审核：林坤 / 发布：林坤
